李春霞博士（教育-论文）
- J.P. Xu, P.T. Lai, C.X. Li, X. Zou, C.L. Chan, “Improved Electrical Properties of Germanium MOS Capacitors with Gate Dielectric Grown in Wet NO Ambient”, IEEE Electron Device Letters, Vol. 27, pp. 439-441, Jun 2006
http://hub.hku.hk/handle/10722/44752
- X.F. Zhang, J.P. Xu, P.T. Lai, C.X. Li, “A Physical Model on Scattering at High-k Dielectric/SiO2 Interface of SiGe p-MOSFETs”, IEEE Trans. Electron Devices, vol. ED-54, pp. 3097-3102, Nov 2007.
http://hub.hku.hk/handle/10722/155399
- J. P. Xu, X. F. Zhang, C. X. Li, P. T. Lai, , C. L. Chan, “Improved Electrical Properties of Ge p-MOSFET with HfO2 Gate Dielectric by using TaOxNy Interlayer”, IEEE Electron Device Letters, Vol. 29, pp. 1155-1158 , Oct 2008.
http://hub.hku.hk/handle/10722/58727
- F. Ji, J. P. Xu, P. T. Lai, Senior Member, IEEE, C. X. Li, and J. G. Liu, “Improved Interfacial Properties of Ge MOS Capacitor with High-k Dielectric by using TaON/GeON Dual Interlayer”, IEEE Electron Device Letters, vol. 32, pp. 122-124, Feb 2011
http://hub.hku.hk/handle/10722/155601
- Improved reliability of Ge MOS capacitor with HfTiON high-k dielelctric by using Ge surface pretreatment in wet NO
https://doi.org/10.1016/j.mee.2007.04.049
